【摘要】 用¹⁶O（α,α）¹⁵O共振散射在E_R=3.042MeV共振,分析样品中氧含量及浓度分布,研究了离子束混合引起的W-Si多层薄膜间的反应及形成的WSi₂薄膜性质与膜中氧杂质浓度的关系,氧的再分布与退火温度的关系。发现随着退火温度升高,氧朝表面扩散。形成硅化物时氧从硅化物中排出,并在表面和硅化物与单晶硅衬界面积累。在350℃下用As离子辐照时,含氧较低的样品直接形成六角WSi₂相,含氧较高的样品没有得到六角WSi₂相。含氧较少的样品,在离子束辐照下混合较均匀,形成的二硅化钨薄膜有较大的晶粒和较小的电阻。更多还原

【Abstract】 The oxygen concentration and depth profile in the Si-W multiplelayer samples were measured by using the 16O(α, α)16O resonance scattring at 3.042 MeV. The reaction between tungsten and silicon and the formed WSi2 by ion beam mixing were studied as a function of the concentrations of oxygen impurity. It has been found that at a low oxygen content, hexagonal WSi2 was formed during the radiation of samples at 350℃ with As+. The silicide was transformed into tetragonal WSi2 at 700℃ annealing. At higher oxygen content, hexagonal WSi2 was not observed. The tetragonal WSi2 was formed at 950℃ anneal-ing. The tungsten and silicon was mixed uniformly and the formed WSi2 films with larger grains have lower resistivities in the samples which contain lower oxygen content.更多还原