【摘要】 用红外光谱、背散射能谱和电子自旋共振波谱研究了不同淀积条件下生长的PECVD氮化硅膜中的氢键,Si/N比和硅悬挂键。对薄膜在不同温度、氮气保护下退火后的氢键及硅悬挂键的变化也进行了测试和分析。更多还原

【Abstract】 Hydrogen bonding configurations, Si/N and Si dangling bond densities in PECVD Si3N4 films have been measured as the function of the processing conditions and annealing temperatures in nitrogen atmosphere with IR, RBS and ESR. The results that hydrogen bonding configurations and Si dangling bonds change with the deposition and annealing conditions have been discussed and analysed.更多还原