【摘要】 半绝缘InP单晶离子注入硅后,进行了包封与无包封热退火研究。结果表明:用SiO₂膜作包封层的注Si⁺InP样品在热退火温度达580℃时开始龟裂,而退火温度高达750℃才能开始激活。用磷硅玻璃作盖片的无包封热退火,在720～750℃范围样品表面光亮,激活率为30～95％,霍耳迁移率最高可达1900cm²/V·s,薄层电阻最低可达203Ω/□。实验中采用高纯氩气作为保护气体,比传统使用的氢气安全、简便。更多还原

【Abstract】 Capped and capless annea ing of Si+ -implanted semi-insulating InP crystals have been investigated. Results indicate that ths Si+ -implanted InP samples capped with SiO2 film begin to crack at 580℃, but can not be activated until 750℃, and that in capless thermal annealing (covered with PSG), the surfaces of samples remain bright and clean at 720-750℃, the electrical activity ranges from 30 to 95%, the highest Hall mobility can reach to 1900cm2/V·s, and the lowest sheet resistivity is 203Ω/□·In the experiments, very pure argon as protsctives gas is more convenient and secure than hydrogen.更多还原