【摘要】 本文较详细地分析了Si/α-Si异质结晶体管（HBT）的微波性能和工艺优点,简述了工艺过程,初步实验结果证实:Si/α-Si HBT具有较好的小电流特性,晶体管的h_fe=12(V_{CE=10V,IC=1mA},BV_CEO=20V。更多还原

【Abstract】 The paper details the high frequency performances and the advantages of the processing of a Si/a-Si heterojunction bipolar transistor (HBT). the processing of the HBT is briefly presented. Our preliminary experimental results reveal that the Si/α-Si emitter has a low recombination rate resulting in a slow drop, current gain, and that the Si/α-Si HBT provides hfe = 12(VCE = 10V,Ic=lmA) and BVcE0= 20V.更多还原