【摘要】 本文用RBS及X射线衍射测量了Ti-Si界面反应生成物,证实了TiSi₂层生长服从抛物线规律,基本上是一个扩散控制过程。用离子注入Xe作标记确定了TiSi₂薄膜生长中主要扩散元素是Si,测量了硅化钛生长过程中相应电阻率变化。比较Darken扩散理论,讨论了标记实验对确立薄膜生长与扩散系数关系中的作用。更多还原

【Abstract】 Ti-Si thin film interaction has been measured by RBS and X-ray diffraction. It has been confirmed that the growth of TiSl2 layer follows parabolic law and basically is a process controlled by diffusion. By means of implanted Xe as a marker, dominat diffusion element Si has been determined during the growth of TiSi2 layer. The change of resistivity in the course of disilicide growth has been measured. A comparison with Darku diffusion theory is carried out aad the effectiveness of marker experiment on the determination of film growth and diffusion coefficient is also discuessd.更多还原