【摘要】 本文建立正面入射型In_0.53Ga_0.47As/InP光电PIN二极管量子效率理论分析模型;分析了提高量子效率的途径:减小结深,改善表面状况对提高器件量子效率有显著作用。应用于器件制作,使器件量子效率在无防反射涂层时可达60％左右,有防反射涂层时高达85％。更多还原

【Abstract】 A theoretical model of the In0.53Ga0.47As/InP photodiode from front side incidence is presented. An analysis indicates that both the decrease in junction depth and the improvement on surface treatment are of great significance to enhance quantum efficiency. Experiments show that the quantum efficiency of devices without and with antireflection coating is about 60% and 85%, respectively.更多还原