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聚乙炔的离子注入法掺杂
DOPING EFFECTS OF ION IMPLANTATION IN POLYACETYLENE FILM
【摘要】 <正> 离子注入是一种物理摻杂方法,在半导体器件的制备中已得到广泛的应用,它与常规的化学、电化学或热扩散掺杂相比具有一些特点:可以通过质量分析器选取单一的注入离子,故掺杂杂质的纯度高;根据注入离子的剂量和能量,精确控制到掺人杂质的数量和深度等等。近年来,采用离子注入技术进行掺杂,改变聚合物或其它绝缘材料表面性质的研究已逐步引起重视真视。
【Abstract】 Ion implantation for doping of polyacetylene film is described. An ion implanter is used for implantation and the conditions for potassium implantation are: ion beam energy 10-30 KeV, fluence 1×1015-1×1017 ions/cm2, and beam current about 2μA. The pristine (CH)x film emerged a little of p-type semiconductor characteristics because of residual catalyst or oxygen. Apparent doping effects were observed in those films implanted with K ions as a n-type electron-donating dopants. Current-voltage characteristic of a p-n junction produced and the resulting diode characteristics are stable for more than a week in the open air. The depth profile of implanted K ions in a polyacetylene film obtained by Rutherford Backscattering Spe-ctrometry (RBS) shows a Gaussian distribution centred around a few thousand A.
- 【文献出处】 高分子学报 ,Acta Polymerica Sinica , 编辑部邮箱 ,1987年04期
- 【被引频次】6
- 【下载频次】50