【摘要】 本文讨论了ＪＦＥＴ低频噪声与图形结构、材料质量等的关系，提出几点设计原则．用设计的管芯图形．配合一些新工艺技术，可研制成具有优异特性的低频低噪声高跨导ＪＦＥＴ３ＤＪ４１５．测量了该器件的噪声性能，并与通用器件作了比较．更多还原

【Abstract】 In this paper we would discuss the relation between the low-frequency noise in JFET and the topological design, the quality of the substrates etc.Some design principles of JFET are given here. With the topology designed accor- ding to these principles and some new fabrication technology, the excellent low- noise high transconductance JFES 3DJ415 is produced. The noise performance of this device has been tested and measured, and compared with some popular devices.更多还原