【摘要】 本文全面分析计算了HEMT器件的直流特性、微波和噪声参量。考虑了二维电子气密度与费米能级关系,得出修正后的电荷控制模型,并结合饱和速度特性计算了HEMT直流特性,同时讨论了负迁移率特性影响。本文第一次得出了HEMT电容特性与噪声参量分析表示式,计算Fukui噪声参数K_F,表明其值比GaAs MESFET小50～70％。更多还原

【Abstract】 A comprehensive analysis concerning the calculations of DC Characteristics,microwave and noise parameters of HEMT is given.A modified charge-control model taking account of the effects of ns~εF dependence is utilized.The DC characteristics are calculated by using saturation model with a minor modification when negative mobility model involved.Analytical formulas for M-W behaviors and intrinsic noise parameters are derived,and the Fukui coefficient obtained KF is 50~70% smaller than that of GaAs MESFET.更多还原