【摘要】 利用白光快速退火设备研究了白光退火特性,得到As通过siO₂注入Si制备0.1～0.15μm无缺陷浅结的最佳条件.发现As通过SiO₂注入的样品退火后其载流子浓度分布出现双峰现象,进而提出了分析这种现象的增强扩散模型.还发现B+As双注入的样品经瞬态退火后消除了减速场.更多还原

【Abstract】 The effects of tungsten-halogen rapid thermal annealing of As-implanted sample and conditions of fabrication of 0.1⁰.3μm shallow junction are stud- ied. The residual defects is observed. So, the shallow junction of 0.1μm free of defects is obtained. It is discovered that the double peak in concentration profile is appeared in As-implanted （through SiO₂ film） Si and rapid thermal annealed. And a model of enhanced diffusion is discussed. The retarded field in double-implanted sample disappeared when the sample is rapid thermal annealed.更多还原