【摘要】 用气固相反应原理分析了单晶硅热氧化机理。在氧化中期,考虑到热应力对扩散系数的影响,从而得出了硅氧化的一个新模型,即化学反应控速——四次方混合控速——扩散控速模型。用该模型处理了文献[4]中的数据与本实验结果均得到满意的相关系数。另外,用扫描电镜和透射电镜对氧化膜进行了观察,分析了单晶硅的氧化膜生长机理。更多还原

【Abstract】 Oxidation kinetics of siliconmonocrystal have been studied. The three steps rule of gas-solid reaction have been raised. The reaction rate of oxidation is divided into three stages: in the initial period the reaction rate is controlled by interface chemical reaction; in the second stage by both interface chemical reaction and slow diffusion due to stress; in the third stage by diffusion.And the microstructure of oxide film have been observed by SEM and TEM.更多还原