【摘要】 用液相外延方法在较低温度（580°—700°）下生长了顺序不同的GaAs-Al_xGa_1-xAs调制掺杂异质结构。测量了温度低达1.5K和磁场高达7.5T之下的霍尔效应,并测量了俄歇溅射谱及氦离子卢瑟福背散射谱。在舒伯尼柯夫—德—哈斯振荡上观察到了各向异性,说明在异质结界面上存在着二维电子气的输运,它和体载流子的输运相并联。更多还原

【Abstract】 The modulation-doped GaAs-AlxGa1-xAs heterostructures with different growth sequences have been grown by liquid phase epitaxy at lower temperatures (580° -700℃). Hall effect and magnetoresistance down to 1.5k and up to 7.5T, Auger sputtering and He ion Rutherford Backscattering spectrum were measured on the speci-mans. The observation of anisotropy in the Shubnikov-de Haas oscillation respect to the directions of magnetic fields at 1.5k implicated the parallel transport effect of two dimensional electron gas at the interface of hetrostructure to that of the carriers in bulk semiconductors.更多还原