【摘要】 制作了1μm沟道长度 LDD nMOSFET,其衬底电流较常规结构的 MOSFET降低了两个数量级,击穿电压提高了5伏.此外,还建立了包括热电子速度饱和和串联电阻在内的LDDMOSFET解析模型.更多还原

【Abstract】 1μm channel length LDD MOSFET was fabricated with a novel processing technique pro-posed in this paper and characterized by means of the analysis of hot electron injection current,breakdown voltage and series resistance.The results show that the substrate current of the LDDdevices is reduced by 2 orders of magnitude,and the source/drain breakdown voltage is incre-ased by 5 volts as the channel length equals Iμm. In addition, an analytical model which in-cludes hot electron effects is developed for the imulation of LDD MOSFETs.The calculatedsesults are in good agreement with the measured data.更多还原