【摘要】 本文讨论了目前使用的MOSFET阈值电压模型的局限性,尝试了用分段近似法求解非均匀掺杂MOSFET的阈值电压,在此基础上提出了一个新的模型公式.它能反映非均匀掺杂MOSFET 阈值电压衬偏特性;不仅适用于浅注入,而且适用于深注入情况;不仅适用于长沟道,而且适用于小尺寸器件.此模型的计算结果同数值分析器MINIMOS的有关计算值相比,符合得很好.该模型公式特别适用于 VLSI CAD.更多还原

【Abstract】 The limitations of the availability model or MOSFETs threshold voltage are discussed.Based on the formula derived by piecewise approximation, a new V_T model is presented,which can reflect the threshold voltage body effect of nonuniform doping MOSFETs.It issuitable not only for shallow implantation but also for deep implantation and not only for longchannel devices but also for small size devices, It is shown that the calculated results of thenew model formula are quite consistent with that of numerical simulator MINIMOS.Particu-larly,the new model formula is suitable for VLSI CAD.更多还原