【摘要】 研制了1.52μm InGaAsP/InP双有源区复合腔结构的动态单纵模激光器,采用了双沟道平面掩埋异质结构来达到横向电流限制,制成的激光器20℃下阈值电流25—50mA,最高激射温度为80℃,线性输出功率>10mW,单面微分量子效率>20％,用565M bits/s、2⁷-1位伪随机码调制,偏置电流由I_th～3I_th均能保持稳定的单纵模输出,其中谱线半宽为0.7±0.01A,纵模抑制比可达25dB（300:1）以上.更多还原

【Abstract】 The authors have developed 1.52μm InGaAsP/InP DAL-DC-PBH DSM LDs with thre-shold current 25-50mA, linear output power>10mW at 20℃, highest lasing temperature80℃,η>20%.Single longitudinal mode operation can be kept under the 565 Mbits/s randomcodes modulation while bias changes from I_th to 3I_th. Centre/side mode power ratio can reach25 dB or more, linewidth is about 0.7 A.更多还原