【摘要】 本文报道了在710℃下Al_xGa_1-xAs过冷式液相外延的短时间生长特性.在710℃下,降温速率为 0.45℃/分钟时“流动”机制被抑制.短时间生长以“表面反应”机制为主.产生了较大的等效过冷度,它是薄层生长的主要障碍.测得在710℃下As在Ga溶液中的扩散系数为2.3×10^-3cm²/s.并测得界面过渡层厚度为170A.更多还原

【Abstract】 Growth properties of Al_xGa_1-xAs by short-time LPE with supercooling regime at 710℃are reported.When cooling rates is 0.45℃/min, "flow" mechanism of growth is limited at710℃.In the short-time regime "surface reaction" mechanism is dominant and larger effe-ctive super-cooling is obtained. The diffusion coefficient of 2.3 ×10^-5cm²/s of As in the Garich solution at 710℃ is measured, and the width of transition layer of composition 170 A isobtained.更多还原