【摘要】 对表面光电压谱及其瞬态特性应用于研究界面态及其动力学性质作了详细的讨论.在界面态在带隙内的分布是连续的情况,得到费米能级上的电子(或空穴)的俘获截面以及光电离截面,并且可得到带隙内界面态分布的轮廓.利用这方法研究了厚度只有10A左右的硅衬底上自然氧化的氧化膜界面,结果表明它的界面态分布和动力学参数与厚氧化膜界面均有所不同.这对了解界面态的演变提供了有意义的参考.更多还原

【Abstract】 The application of surface photovoltage spectroscopy and its transient characteristics to thestudy of the distribution and dynamic parameters of interface states has been discussed in de-tail.In the case of continuous distribution of interface states within bandgap,the photoioniza-tion cross sections of electrons (or holes) at Fermi level as well as the profile of the distribu-tion of interface states are obtained.An investigation on the interface between crystal Si andits native oxide (about 10 A) has been performed by this method.The results reveal that thedistribution and dynamic parameters of the interface sates at this very thin oxide interface dif-fer from those at thick ones.This is valuable for the understanding of the development of in-terface states.更多还原