节点文献
二元化合物总原子溅射率和刻蚀速率的经验公式
Calculation of Total Sputtering Yield and Etching Rate on Binary Compound
【摘要】 本文给出低能离子法向轰击二元化合物时,总原子溅射率Y和刻蚀速率R_o陆离子能量E变化的经验公式. 计算结果表明:若低能氩离子法向轰击二元化合物,则由经验公式算出的总原子溅射率和刻蚀速率与实验值的最大相对误差小于20%。
【Abstract】 Empiric formulas of total sputtering yield and etching rate on binary compound bombar-ded by heavy ions with low energies at normal incidence are presented.The calculated resultsshow that the empiric formulas are accurate within an error of±20% between calculated andmeasured values.Therefore,our cmpiric formulas would be basically reasonable.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,1987年04期
- 【被引频次】2
- 【下载频次】72