【摘要】 用背散射-沟道效应研究了Si中注Pb并进行红外瞬态退火的辐照损伤及杂质分布.注入能量为350KeV,剂量为1×10¹⁷及5×10¹⁵/cm².实验表明高杂质浓度区中的杂质沉淀和晶格应力能抑制晶体的外延生长.当外延生长停止后,表面形成多晶结构,杂质沿晶粒边界向表面扩散.更多还原

【Abstract】 Backscattering-channeling effect has been used to determine the lattice disorder and dis-tribution of Pb implanted in Si followed by infrared transient annealing.The results suggestthat in the high implant concentration region,Pb precipitaties and high local stress level maysufficiently retard the rate of epitaxial regrowth.As epitaxial growth has ceased,a polycry-stalline structure surface layer results and the grain boundaries offer preferential diffusionpaths towards to the surface, thus a redistribution of Pb takes place.更多还原