【摘要】 本文研究高剂量As注入P-Si单晶,经过低温热退火和高温电子束扫描两步退火方式后的性能。用高压电子显微镜观察样品注入层的剩余缺陷,结果表明:只经过一步高温热退火或电子束退火的样品,剩余缺陷密度为10~3/cm~2以上,线缺陷长度为2-4μm,有位错环和位错网存在.两步退火后,样品注入层的缺陷密度降到10~7/cm~2量级,线缺陷长度小于0.5μm.位错网消失。更多还原

【Abstract】 Properties of high dose As ion implanted <111> Silicon annealed at a lower temperature andby an electron beam have been investigated. If the silicon specimens are only annealed at a hi-gher temperature or by an electron beam,the density of defects is about 10~9/cm~2,the lengths ofdislocations or other defects are up to 2-4μm,and the dislocation loops and networks are ob-served in the implanted layer.After two-step annealing-a lower temperature thermal anne-aling followed by a higher temperature electron beam annealing,the density of defects is decre-ased by one order at least.The length of dislocation is less than 0.5μm.No dislocation networksare observed.更多还原