【摘要】 本文从理论上分析了能带结构参数和输运机制对 1.3μm InGaAsP半导体激光器的异质势垒准平衡载流子泄漏过程的影响,及其对T_o的影响.以及最近对上述器件所作的载流子泄漏观测结果所出现的矛盾.指出准平衡泄漏过程不可能对T_o起主要作用,最近实验观测到的泄漏电流可能来自俄歇复合产生的过热载流子泄漏,而且并不与“存在CHSH过程,但对T_o起主要作用的是CHCC过程”的结论相矛盾.更多还原

【Abstract】 The influences of energyband structure parameters and transport mechanisms on the car-rier leakage by the quasiequilibrium carriers over the heterobarriers of InGaAsP/InP DH laserslasing at a wavelength of 1.3μm,and the confusing made by recent experimental results oncarrier leakage have been analysed.It is shown that the quasi-equilibrium leakage processes cannever play an important role in T₀,and that the leakage current measured may be due to theleakage of the hot carriers produced by Auger recombination,which still may be mainly CHCCprocess.更多还原