【摘要】 一般半导体超晶格(如GaAs-Al_xGa_1-xAs)中的空穴在垂直于界面方向（z 方向）的运动与XY面内的运动不是相互独立的,因此空穴子带具有复杂的性质.本文在Luttinger-Kohn有效质量理论基础上,提出一种计算空穴子带的方法.它实质上就是以L-K有效质量方程的轻重空穴本征解为基,按超晶格倒格矢展开,直接解久期方程的方法.采用这种方法不需要作各向同性化等简化假设,而计算收敛又很快,倒格矢只要计算到三、四级已可达到适当的精度.文中报道了具体计算结果,包括最低几个子带的色散曲线（包括各向异性）.典型的波函数,并着重指出空穴子带如何区别于一般习惯的若干有关子带的概念,如轻重空穴子带的区分等.更多还原

【Abstract】 Hole subbands in GaAs-Al_xGa_1-x As quantum wells and superlattices are calculated on thebasis of the Luttinger-Kohn effective mass theory.The method of calculation parallels usualpseudopotential energy band calculations in terms of plane wave basis functions.In the pre-sent instance,the usual heavy and light hole solutions of the L-K equations constitute the basisfunctions,with a Kronig-Penney type effective superlattice potential taking the place of theatomic pseudopotentials.Owing to only one dimensional periodicity in the present case,despitethe four-fold basis functions,a very limited number of reciprocal lattice vectors need be usedto obtain reasonable accuracy.Typical calculated subband dispersion curves E（R） and holewave functions are given.Various features of hole subbands,such as anisotropy and nonpa-rabolicity,intermixing of heavy and light holes,interdependence between 2D subband and per-pendicular motion,inter-well coupling effects etc are discussed.更多还原