【摘要】 根据室温和77K下电学性质测试数据,计算了非掺杂VPEGaAs材料中空间电荷中心密度与散射截面积的乘积N_SOA,然后从N_SOA分别与N_D及μ_300K间的关系,推测空间电荷散射中心是某种Si_GS-（O₁,V₁）型的络合物.结合本工作,为了在AsCl₃欠纯的情况下获得适当纯度的外延层,在气相外延系统中装入去硫装置,有效地抑制了硫、硒等杂质,附带发现该装置对碳的去除也有一定效果.更多还原

【Abstract】 In this paper, the product of space charge density and scattering cross section has been calculated from the measured room temperature mobility by the use of Matthiessen’s rule. A linear relationship between NSCA and ND has been found. On the basis of this relationship, the space charge center presented in undoped VPE GaAs epilayers is postulated to be a complex of the SiGa(O1, Vt) type.Besides, an in site sulpher remover has been designed and used in the AsCl3-Ga-H2 epitaxial system for the first time, and found to be quite effective in depressing the carrier concentration of the epilayers.更多还原