【摘要】 用光电容方法研究了GaP（N）样品中深能级杂质缺陷;以曲线拟合方法计算机分析多能级响应的瞬态光电容谱,确定深能级参数:能级位置、能级浓度和光发射率等;并测量了GaP（N）LED的发射光谱和发光效率。结果表明:发光效率较低的LED(η_ext=0.019％)中存在着E₁、E₂、E₃、E₄、E₅、H₁多种深能级;发光效率较高的LED(η_ext=0.096％),深能级较少（E₃、E₄、H₁）。这些深能级具有无辐射复合中心作用,使发光效率明显降低。更多还原

【Abstract】 In this paper, deep level defects in Gap(N) are studied by Photocapacitance method. The curve fitting method is used for analyzing the non-exponential photocapacitance transient which may be related to a number of electron or hole emission from several deep levels. The parameters of deep levels (position, concentration of energy level and photo emission rate) have been determi ned. The electro luminescence spectrum and efficiency of GaP (N) LEDs were measured. In poor Gap(N) LED (ηext=0.019%), a number of deep levels (five electron traps E1-E5 and one hole trap H1) were detected,while in high efficiency GaP(N) LED (ηext= 0.096%) few deep levels detected. It has been shown that the luminescence intensity and efficiency of the poor GaP (N) LED are obviously depressed and most of the deep level defects are non-radiation centers.更多还原