【摘要】 本文研究了由辉光放电(GD)方法制备的氢化非晶硅(a-Si:H)钝化膜对于降低集成电路低频噪声的作用。提出了一种较佳化的a-Si:H/SiN复合钝化层结构。实验表明,当频率f<10~3Hz时,采用复合钝化层的电路其等效输入噪声电压减少约一个数量级。同时对该复合钝化膜进行了可靠性试验。更多还原

【Abstract】 The action of a-Si:H Passivation film Prepared by GD method on reduc- ing the low frequency noise in ICs is investigated. An optimized a-Si:H/SiN multi- layered passivation film structure is presented. It has been experimentally shown that when f<10~3Hz, about one order of magnitude reduction in the equivalent input noise voltage as compared with the conventional method is obtained. Finally the reliability of the multilayered passivation film has been tested.更多还原