【摘要】 本文通过对晶闸管关断物理过程的分析得到:n基区深中心的最佳剖面分布应是N_t（j₂）>N_t（j₁）。经过实验,根据DLTS和电特性参数的测量、分析的结果可知,硼、磷扩散浓度和金掺杂总量都会改变n基区的金分布,且不同的金分布相应于不同V_T～t_q。折衷曲线。所以,快速晶闸管n基区金浓度的最佳分布,应当有相应的最佳V_T～t_q折衷曲线,它依赖于硼、磷、金扩散的最佳配合。更多还原

【Abstract】 This paper point out that optimizing frofile of deep level recombination center in n-base should be N_t（j₂）>N_t（j₁） by analysing turn-off physical procedure for thyristor. As the results of measurement and analysis of DLTS and electrical parameter, that the boron-doped concentration, phasphorus-doped concentration and quantity of gold-doped all can change gold profile in n-base, and the various gold profile is consistent with various V_T～t_q compromise curse. So the optimizing gold concentration in n-base for fast switching SCR should have optimizing V_T～t_q compromise curve. It depend on optimizing combination of gold, boron and phosphorus diffusion.更多还原