【摘要】 <正> 一、CMOS电路中的锁定现象CMOS电路是在同一硅衬底上同时具有P沟及N沟MOS管的结构,因此,其内部存在着寄生的纵向npn和横向pnp晶体管,构成pnpn寄生可控硅结构。其剖面图及等效电路图示于图1及图2。更多还原

【Abstract】 The Latch-up phenomena in CMOS ICs are analysed in this paper. A general criterion for Latch-up is derived from the equivalent circuit with distributed resistance elements.It has been used to explain why latch-up phenomena in ciosed po(?)ysilicon gate CMOS ICs of commonsource structure are more serious.The methods for latch-up preventing are presented and experimental resulte are given.更多还原