【摘要】 <正> 一、实验方法本实验所使用的材料为P型<111>硅单晶,电阻率p=5-10Ω-cm,选用160keV,150keV,80keV的能量;5×10¹⁵-1×10^1（?）cm^-2的剂量;0.5-7μA/cm²的束流密度;倾斜7°角注入砷。注入后样品用950—1100℃氮气退火,然后用四探针仪测量均匀性、方块电阻R（?）,用范德堡法测量迁移率、薄层电阻R（?）、薄层载流子浓度N（?）,并用活化分析法测量绝对剂量,得到了砷的激活率。用椭偏光法测量非晶层厚度,通过透射电子显微镜观察二次缺陷。用热偶测量注入层的靶温,得到了靶温与非晶层厚度的关系。更多还原

【Abstract】 The behaviour of heavily doped ion implanted layers of arsenic in silicon was studied. After annealing the electrical behaviour was good when the beam current density of 0.5nA/cm~2-7μA/cm~2. This paper suggested that larget emperature must be controlled under 100℃. Balance target temperatures of several kind of beam current density were estimated. The highest beam current density of this implanter for different condition was provided.更多还原