电子束曝光中能量沉积过程及沉积能分布规律

【摘要】 电子束曝光是研制亚微米线宽VLSI的重要手段,虽然电子束机本身可达100(?)或更高的分辩率,但入射电子在胶和衬底中的散射却使曝光分辨率降低到微米级,这说明电子束入射后的能沉过程及沉积能的分布是影响曝光分辨率的关键因素。本文利用多层介质中电子散射的Monte-Carlo计算模型计算了不同条件下的能沉过程,提示并使用了三维接近函数来描述胶中沉积能的分布规律,研究了曝光条件对沉积能分布的影响,文中并给出表示电子空间输运过程的矩阵递推式,使散射过程描述更加完善和简化,以便能更好的应用于电子束曝光的邻近效应校正和曝光条件的优化中。更多还原

【Abstract】 Electron Beam Lithography(EBL) is one of the most important methods to fobricate a submicron VLSI device.The ultimate resolution of EBL is limited by electron scattering in resist film and substrate.In this paper energy deposition process under different exposure conditions have been simulated with newly developed multilayer Monte Carlo Model, and then a spatial proximity function ismproposed and utilized to present the spatial energy distribution, with which the influence of exposure condition , such as initial energy of incident beam substrate material and resist thickness,on the distribution is investigated.A matrixing formula for electron transportation is given.It can be convenintly applied to the proximity effect correction in the EBL.更多还原