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立方半导体中双空位态的电子结构(Ⅲ) 硅中双空位态的波函数
ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ) WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI
【摘要】 利用文献[1]中的基本方程和Vogl等人的紧束缚哈密顿量,计算了硅中理想双空位的E_g和E_u态的波函数,讨论了计算结果和ESR与ENDOR谱的比较。
【Abstract】 The wavefunctions of the Eu, state and the E? state are evaluated for the ideal divacancy in Si, using the basic equations given in [1] and the tight binding Hamiltonian given by P. Vogl et al. Comparison between the culculated results and the ESR and ENDOR spectra of V2+ and V2- in Si is discussed.
【基金】 中国科学院科学基金
- 【文献出处】 物理学报 ,Acta Physica Sinica , 编辑部邮箱 ,1986年11期
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