【摘要】 用12kW转靶X射线衍射装置测定了非晶半导体a-As₂Se₃,a-AsSe以及a-As_0.05,Se_0.95的k吸收EXAFS,a-As₂Se₃经T≤T_g（玻璃转变温度）的不同温度处理后,亦进行了测定。由获得的径向结构函数分析表明:尽管a-As₂Se₃的短程结构与晶态c-As₂Se₃十分相似,但经过低于T_g的退火处理后,其径向结构函数发生了一定的变化。熔态淬火制备的a-As₂Se₃块体亦发生结构弛豫。此外,在非晶态As-Se二元系中随As含量的变化,材料的近程结构亦不同。更多还原

【Abstract】 The EXAFS of amorphous semiconductor a-As₂Se3, a-AsSe, a-As_0.05Se_0.95 and a-As₂Se₃) after annealing at different temperatures lower than Tg are measured by 12 kW rotating anode X-ray diffraction equipment. Analyses of the determined radial structural functions shows that although the short range structure of a-As₂Se₃ is very similar to that for crystalline As₂Se3, some changes take place in its radial structural function after annealing. The structural relaxation in a-As₂Se₃, quenched from melt, has also been observed. The short range structures for different components of As in binary As-Se system seem to be different.更多还原