【摘要】 本文系统地研究了77K下掺杂（B或P）的a-Si_1-xC_x:H膜在平衡状态和弱光照下的ESR 特性,文中报道了该膜价带尾态中定域化空穴的ESR吸收谱。实验结果还表明:虽然a-Si_1-xC_x:H膜中由于B掺杂会引起光电导的改善,但却不能使悬挂键总浓度减小。更多还原

【Abstract】 In this paper, we describe the results of the equilibrium ESE and the LESE measurements in B- or P-doped a-Si1-xCx:H films at 77 K. To our knowledge, this is the first observation of the ESE of holes in the valence band tail for the films. The present LESE result shows that B-doping does not reduce the total density of dangling bonds including D+ and D-, although it improves the photoconductivity in a-Si1-xCx :H更多还原