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等离子体压力对辉光放电沉积的a-Si:H膜的组成、结构及性能的影响
Effect of Plasma Pressure on the Properties of a-S∶H Films
【摘要】 本文主要研究了等离子体压力对射频辉光放电法沉积的非晶硅氢合金(a-Si∶H)膜的组成、结构及性能的影响.它们包括 a-Si∶H 膜的氢含量、氢的键合形式、光致发光、电导率、光电导、自由载流子寿命及传输机理.研究结果表明:等离子体压力按照气体辉光放电的 Paschen 曲线的分布对 a-Si∶H 膜的组成、结构及性能的影响是极为重要的.采用分别落在类 Paschen 曲线的高压分支和低压分支的等离子体压力来制备 a-Si∶H 膜,所得到的样品具有相应的两种类型的组成、结构与性能。文中还首次报道了一个重要的实验结果:a-Si∶H 膜的暗电导率随温度变化的 Arrhenius 曲线在410K 的温度附近发生转折的现象出现与否是与等离子体压力有关系的.文中还对这现象进行了解释.
【Abstract】 The effect of the plasma pressure on the hydrogen content,type of the Si-H bond-ing,photoluminescence,optical gap and the electric transport properties of plasmadeposited hydrogenated amorphous silicon(a-Si:H)has been studied.It has beenindicated that the composition,structure and properties of a-Si:H films are stronglyaffected by the plasma pressure,a-Si:H films can be classified as two different typeswith entirely different composition,structure and properties,depending on whether their gaspressure employed during the plasma deposition is located on high pressure or lowpressure branch of Paschen curve.An important result has been obtained from theobservation that samples prepared at P>P0, P0 is the pressure of Paschen curveminimum,contain silicondihydride and have a kink in the conductivity curve near410K,whereas samples prepared at P<P0 do not.A tentative explanation is given.
【Key words】 Plasma pressure; Paschen curve; Silicondihydride; Kink;
- 【文献出处】 无机材料学报 ,Journal of Inorganic Materials , 编辑部邮箱 ,1986年01期
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