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MINP太阳电池及其表面复合的分析

MINP SOLAR CELLS AND THEIR ANALYSIS OF SURFACE RECOMBINATION

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【作者】 郭里辉朱长纯刘恩科

【Author】 Guo Li-hui Zhu Chang-chun Liu En-ke(Electronic Engineering Department, Xi’ an Jiaotong University)

【机构】 西安交通大学电子工程系西安交通大学电子工程系

【摘要】 本文讨论了MINP太阳电池表面对光生载流子复合的影响,得出无栅区表面势与掺杂浓度和氮化硅中固定正电荷的关系,并分析了无栅区和电极区表面势对复合的影响。该电池在不增加复杂工艺的基础上可提高转换效率,目前我们用氮化硅作抗反射膜的电池,其有效面积转换效率达15.2%(AM1.5,100mW/cm~2,28℃)。

【Abstract】 Based on the the theories of MIS contact and surface recombination, the influence of the surface of MINP solar cell on the photogenerated carrier recombination was discussed. The relation between surface potential, doping and fixed positive charges of the active region were obtained. The influence of surface potential of active region and top contact region on the recombination were also calculated respectively. It is believed that the surface recombination rate decreases exponentially as the fixed positive charges in silicon nitride antireflection layer of active region increase. Under the same design of the transverse resistance of the cell, the doping of N-region of the MINP solar cell is found much lower than the doping of the solar cell using other material instead of silicon nitride as antireflection layer. AM 1.5 (100mV/cm2,28℃) active area efficiency of 15.2% MINP solar cell using PECVD silicon nitride as antireflection layer has been obtained.

  • 【文献出处】 太阳能学报 ,Acta Energiae Solaris Sinica , 编辑部邮箱 ,1986年04期
  • 【被引频次】2
  • 【下载频次】90
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