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非晶硅p-i-n电池中空穴的收集长度
THE COLLECTION OF PHOTOGENERATED CARRIERS IN AMORPHOUS SILICON P-I-N SOLAR CELLS
【摘要】 测量p-i-n电池单色光的光生电流随外电压的变化,可得出空穴的收集长度。空穴的μτ乘积在3×10-9—1×10-8cm2/V,空穴收集长度和电池的填充因子有对应关系。由收集长度随外电压的变化可解释电池的收集效率随外电压的变化,只有FF很差的p-i-n电池,偏置光强才影响光生载流子的收集。一般的p-i-n电池,在不加偏置光条件下测得的收集效率反映AM1光强下的情况,这使p-i-n电池的测试更加简单。
【Abstract】 A collection length was obtained by measuring the relation between photocurrent of monochromatic light and applied voltage in a p-i-n solar cell. μτ products of holes in the range 3×10-9 - 1 × 10-8 cm2/V are deduced. The results indicate that the collection length of holes correlates with the fill factor of a solar cell. The change of the collection efficiency with applied voltage can be explained by the change of the collection length with applied voltage. We have found that a bias light will only influence the collection of photogenerated carriers of a p-i-n solar cell which has very poor fill factor. Generally,for a p-i-n solar cell the collection efficiency measured under no bias light condition is the same as that under AMI illumination. It is different from a Schottky barrier solar cell.
- 【文献出处】 太阳能学报 ,Acta Energiae Solaris Sinica , 编辑部邮箱 ,1986年02期
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