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掺杂浓度和晶粒度对Sdhottky势垒型CdTe薄膜太阳电池短路电流和光谱响应影响的计算与分析
The Calculation and Anaiyzation About the Short-Circuit Current and Spectrum Response of Poly-CdTe Thin Film Schottky Solar Cells
【摘要】 用晶界复合损失模型分析法计算MS和MIS型CdTe多晶薄膜太阳电池的短路电流和光谱响应。结果表明,掺杂浓度对Jsc的影响要比对晶粒度的影响强烈得多,在低掺杂浓度(Nd=1014cm-3)下,细小晶粒度电池的Jsc很接近单晶电池的水平。与以往实验结果对比,发现在相同掺杂(Nd=1014cm-3)和晶粒度(2R=1μm))下,计算值与测量值相当一致。
【Abstract】 Using the Rothwarf’s model of recombination loss in the grain boundary, the short-circuit current and spectrum response of MS and MIS poly-CdTe thin film Schottky solar cells had been calculated and analyzed. It is the results follow. The effects of doping impurity density on short-circuit current is much greater than grain size. In the case of low doping impurity density (Nd=1014cm-3), the Jsc of fine grain size cell very approaches to the level of single crystal cells. Comparing these calculated results with results of experiments, it is found that the calculated value is consistent very good with measured value in the case of same doping impurity density (Nd=1014cm-3) and same grain size(2R=1μm).
- 【文献出处】 内蒙古大学学报(自然科学版) ,Acta Scientiarum Naturalium Universitatis Neimongol , 编辑部邮箱 ,1986年04期
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