【摘要】 本文采用气压-波长扫描F-P干涉法测量了国产半导体激光器的输出线宽。测量结果表明:质子轰击条形AlGaAs/GaAs（DH）注入激光器线宽典型值为3.2 GHz·mW^-1。该结果与 C.H.Henry的半导体激光器的线宽理论相差27倍。为解释这误差,本文从半导体激光器的噪声理论和激光器谐振腔理论出发,具体分析了条形半导体激光器谐振腔波导结构,讨论了半导体激光器线宽的结构增宽,修正了C.H.Henry的线宽理论公式。经过修正的线宽理论公式具有更普遍意义,并与实验结果取得了基本一致。更多还原

【Abstract】 Linewidth study of CW photonbombarded stripe geometry （DH） injection Semiconduc-tor lasers at room temperature has been reported in this paper. Experimental resultsshow that the linewidth is 3.2 GHz mW^-1. This value is 27 times greater than the theore-tical value of the linewidth of sermiconductor lasers given by C.H.Henry. An idea ofstructure broadening of linewidth was given here and the linewidth formulation was cor-rected. Therefore, The theory of the linewidth of semiconductor lasers is more perfect,and quite agreeable to the experiment.更多还原