节点文献
氢化非晶硅多数子驼峰二极管
A NYDROGENATED ARMORPHOUS SILICON MAJORITY-CARRIER CAMEL DIODE
【摘要】 本文提出了类似单晶硅多数子驼峰二极管的氢化非晶硅多数子驼峰二极管结构。测定了 I-V 特性,二极管的理想因子 n=1.20,驼峰势垒φ_B=0.70ev,从正向电流1.4A/cm~2到稳定反向电流的开关速度150ns.
【Abstract】 A hydrogenated armorphous silicon majority-carrier camel diode which is similar to a majority-carrier camel diod in the crystal silicon is described.Current-voltage characteristic is measured,ideality factor n=1.20,camel barrier heightφ_B=0.70eV. Diode switching time from a forward current density of 1.4A/cm~2to the steady-state reverse leakage current is 150ns.
- 【文献出处】 暨南理医学报(理科专版) , 编辑部邮箱 ,1986年03期
- 【下载频次】21