【摘要】 本文使用金刚石对顶砧压机（DAC）和MSM-25C型显微分光光度计测量了压非晶硅（a-Si:H）和非晶三硫化二砷（a-As₂S₃）的吸收边的影响。在0-50kbar范围内,a-Si:H吸收边的压力系数△E_g/△P≈-8×10^-4eV/kbar,在0—22力对kbar压力范围内,a-As₂S₃吸收边的压力系数△E_g/△P≈-1.4×10^-2eV/压力kbar,而且在压力作用下它们的吸收边的变化是不可逆的。更多还原

【Abstract】 In this paper, the pressure effects on absorption edge of a-Si:H and a-As₂S₃ have been measured with diamond anvil cell and microspectrophotometer. The pressure coefficient of absorption edge of a-Si:H is ⊿E_g/⊿P=-8×10^-4eV/kbar in the range of 0—50 kbar, the pressure coefficient ofabsorption edge of a-As₂S₃ is ⊿E_g/⊿P=-1.4×10^-2eV/kbar in the range of 0—22kbar. The changes of absorption edge of a-Si:H and a-As₂S₃ are unadverse under pressure.更多还原