节点文献

用化学沉积法制备GaAs肖特基结及其光电性质的研究

The Schottky Barriers Prepared by Chemical Deposition Method on GaAs and the Studies of their Optical and Electrical Properties

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 严永铁阎大卫王宝琨刘文明

【Author】 Yan Yongtie, Yan Dawei, Wang Baokun and Liu wenming (Department of Electronic Sciences, Jilin University)

【机构】 吉林大学电子科学系半导体物理教研室吉林大学电子科学系半导体物理教研室

【摘要】 本文用改善了的化学镀液制备Au-GaAs、Pd-GaAs和钯活化的Au(Pd)-GaAs肖特基结,并讨论了沉积的化学机理。通过对不同样品的光电性质的测量和分析,着重讨论了钯活化的作用。

【Abstract】 In this paper the preparation of Au-GaAs, Pd-GaAs and palladium activated Au(Pd)-GaAs Schottky barriers by the chemical deposition method, using improved plating solutions, is reported and the mechanism of the chemical deposition is discussed. The current-voltage characteristics and the spectral response of photovoltaic effect of the samples prepared under the different technological conditions were measured and the effect of the activation is disscussed by analysing these measurement results in this paper.

  • 【文献出处】 吉林大学自然科学学报 ,Journal of Jilin University , 编辑部邮箱 ,1986年03期
  • 【被引频次】1
  • 【下载频次】40
节点文献中: 

本文链接的文献网络图示:

本文的引文网络