【摘要】 本文报导了我们研制的Ga_p-xA1_xAs/Ga As微解理腔面氧化物条形结构半导体激光器的工艺和特性,并着重讨论了短腔激光器的光谱特性。更多还原

【Abstract】 In this paper, the fabrication and the properties of Ga_1-xAl_xAs/GaAs microcleaved facet lasers that we first fabricated at home are discribed. A laser with cavity length as short as 35μm and with 65mA threshold current has been achieved. A single mode lasing was maintained by a short cavity length laser up to 1.4I_th. In this paper, we also discuss the other spectral characteristics of short cavity lasers and the relationship between the threshold current and the cavity length.更多还原