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用化学气相传输法制备Hg1-xCdxSe单晶体
Growth of Ternary Compound Hg1-xCdxSe Crystals by Chemical Vapor Transport Technique
【摘要】 用化学气相传输法(CVT法)制备出了Hg1-x CdxSe晶体。晶体呈现规则的多边形习性面,且光滑平整,干涉显微镜拍得的照片为匀直条纹,在某些晶体的(111)面边缘处偶而可看到星形条纹。使用新的化学腐蚀剂在(111)晶面上观察到了三角形位错腐蚀坑,其密度为104/cm2量级。 X-光衍射测量表明,此种晶体为面心立方结构,所测得的组分x值与源的化学配比基本一致。
【Abstract】 Hg1-xCdxSe bulk crystals with regular polygonal habit faces have been prepared by the method of chemical vapor transport reaction(CVT). Most of the faces are smooth and even. Equally spaced straight lines were showed in the photographs taken by the interference microscopy. Star liked strips were also found on the margin of (111)faces. The triangular etch pits of dislocation were observed on (111) surface, and the density was about 104.It showed face centered lattice structure by X-ray diffraction, and the mole fraction of CdSe measered withX-ray diffraction is consistent with that in the source.
- 【文献出处】 吉林大学自然科学学报 ,Journal of Jilin University , 编辑部邮箱 ,1986年03期
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