节点文献
NTD硅探测器
Neutron Transmutation Doping Silicon Detectors
【摘要】 采用国产NTD硅单晶,研制了性能较好的NTD硅探测器。用它精确测定14MeV中子能量和作为γ射线计数器均取得了较满意的结果。其性能指标为:反向偏压1kV,漏电流≤5μA,26℃;对241Am α源,FwHM为31-50KeV,26℃;对137Cs 625 keV的内转换电子,FwHM为6.85LeV,-2℃。
【Abstract】 The NTD silicon detectors of better performances have been prepared with home-made NTD silicon crystals. They can be used as γ ray counters and to determine exactly 14 MeV neutron energy. Performance data: reverse bias voltage 1000V, Ieakage current≤5μA at room temperature FWHM 31-50 keV at room temperature (241Am alpha-spectrum); FWHM 6.85keVat-2°C (137C5 625 keV conversion electrons),
- 【文献出处】 核电子学与探测技术 ,Nuclear Electronics & Detection Technology , 编辑部邮箱 ,1986年03期
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