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接近式光刻机曝光系统的设计
Designing of Exposure System of Close-up Photolithographic Eguipment
【摘要】 本文从瑞利一索末菲衍射公式出发,对接近式光刻机曝光系统进行理论分析和计算,得出其光学性能参数。同时给出依据这些参数所设计的系统所得的结果。
【Abstract】 The theoretical analysis and compulation relevant to the exposure system of the close-up photolithographic equipment are performed in line of Reyleigh-Sumerfei diff- raction formula,the parameter dealing with optical properties being obtained,mean- while the result gained from the system desigried in accordance with these parameters is given.
- 【文献出处】 光学仪器 ,Optical Instruments , 编辑部邮箱 ,1986年01期
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