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n+InSb/PHg1-xCdxTe异质结的液相外延生长及红外探测器
LPE growth of n+InSb PHg1-xCdxTe hetero junction
【摘要】 本文报道用水平滑舟系统液相外延制备n+InSb/PHg1-xCd?Te异质结.该异质结外延层厚度在15~25μm之间,由电镜扫描分析出外延层和衬底之间的介面平直,组分过渡很徒.采用该异质结能制备3~5μm(x=0.3)、8~14μm(x=0.2)两波段的红外探测器,从介绍的单元器件的性能来看,该材料是红外焦平面列阵研究方面极有希望的膺选对象.
【Abstract】 This paper describes an n+-p InSb/Hg1-xCdxTe heterojunction prepared by using liquid-phase epitaxial method. The growing system used consists of a horizontal slider boat in the open-tube filled with H2. Growth temperature is between 300-400℃ and cooling rate is slower than 8℃/min. The grown film has a mirror-like surface with a thickness of l5-25μm. EDAX-SEM analysis shows that the interface between layer and substrate is straight and the compositional transition is very sharp. Infrared detectors of both 3-μm and 8-14μm can be made of this material. The response wavelength of the detector depends upon the x value in Hg1-xCdxTe (x = 0.3 for λ= 3 - 5μm while x = 0.2 for λ = 8 - 14 μm). For a detector element about 1mm in diameter, Dlb+≥l E10 cm Hz1/2/W at 77K(3-5 μm), Ro>10kΩ. Therefore, this new material is also a prominent candidate for infrared focal plane arrays.
- 【文献出处】 光学学报 ,Acta Optica Sinica , 编辑部邮箱 ,1986年11期
- 【被引频次】1
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