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GaP:N光致发光的脉冲测量
Pulsed measurement of GaP.N photoluminescence
【摘要】 本文介绍了由脉冲式溴代铜激光器和Boxcar平均器等组成的光致发光测量装置.测量了液相外延片GaP:N在不同温度(80~300K)下和不同厚度处的光致发光谱.根据谱图,分析了绿色发光机理.
【Abstract】 This paper describes the photo luminescence detection apparatus, which consists of a pulsed CuBr laser with low duty cycle and a boxcar averager. It features high sensitivity and good repeatability.The photoluminesoent spectra of a liquid-phase epitaxial GaP:N wafer have been measured in the temperature range 80-300K and for different thicknesses. Based on the spectra, the green-light emitting mechanism is analysed. It is found that the spectra are mainly composed of A-O and NN1 peaks in the range of 80-160K, while the A peak and its phonon-assooiated peaks dominate over the spectral in the range of 160-300K. The NN1 peaks are very prominent in the spectra of different epitaxial layers. Analysis of NN1 peaks could help prepare high efficient green-light-emitting GaP:N materials.
- 【文献出处】 光学学报 ,Acta Optica Sinica , 编辑部邮箱 ,1986年11期
- 【被引频次】1
- 【下载频次】17