【摘要】 在高频激发的氧等离子体中实现了锗的阳极氧化.用IR-450S型红外分光光度计测量了锗上等离子体阳极氧化膜的红外透射比.实验指出,该氧化模靠近870cm^-1、560cm^-1各有一个红外吸收带.红外吸收数据与Sen和Thorpe的中心力网络模型的振动带边相结合,算出锗氧化膜的Ge-O键伸缩力常数α=439N/m,Ge-O-Ge键角θ=129°.更多还原

【Abstract】 This paper describes the anodization of germanium in an oxygen-plasma excited by a high-frequency electromagnetic field. The refractive index of the plasma-anodized GeO2 film is about 1. 66. The transmittance of the oxide film on Ge was measured on an IR-450S type infrared spectrophotometer. The experiments show that infrared absorption bands of the GeO2 film are at 870cm-1 and 560 cm-1. The stretching constant of the Ge-O bond α (439N/m) and the Ge-O-Ge bond angle θ(129°) were calculated from the infrared absorption data together with the edges of vibration bands predicted by the center-force-network model of Sin and Thorpe.更多还原