【摘要】 本文将DLTS测试技术用于低剂量B⁺注入MOS结构,并给出了计算方法.对通过920（?）SiO₂膜、注入剂量为5×10¹¹B⁺ cm^-2,经480℃、15分钟热处理的样品测到了E_T-E_V=0.19eV,E_T-E_V=0.26eV和E_T-E_V=0.33eV三个深能级;对于1×10¹²B⁺ cm^-2注入,经常规热退火（950℃、30分钟）和红外瞬态退火（辐照源温1150℃,40秒）后分别测到了深能级E_T-E_V=0.24eV和E_T-E_V=0.29eV;对引入这些深能级的残留缺陷进行了讨论.更多还原

【Abstract】 DLTS measurements have been performed on MOS structures to determine the residual deep-level defects produced by low-dose B+ implantation into Si and the corresponding calculation fromulas have been given. For the 920A SiO2 film, with the dose of 1×1012cm-2, annealing at 950℃ for 30 minutes in a conventional furnace and annealing in heated graphite stripe (1150℃ for 40 seconds), two deep levels, ET-EV = 0.24eV and ET-EV = 0.29eV, have been found. The possible assignments for these deep levels are also discussed.更多还原