【摘要】 本文叙述了12GHz单片组合的低噪声GaAs MESFET放大器的设计和制造.每级单片放大器包含一个有源元件FET、一个隔直电容和两个射频旁路电容.在11.7～12.2GHz范围内,单级放大器增益6.0dB,噪声系数3～3.5dB,三级放大器增益16～18dB,噪声系数≤4.0dB.更多还原

【Abstract】 This paper presents the design and the fabrication for 12GHz monolithic cascade low noise GaAs MESFET amplifiers. Each MIC consists of one FET as an active element, one de-block capacitor and two RF-bypass capacitors.In the range of 11.7-12.2GHz the one-stage shows a gain of 6dB, a noise figure of 3-3.5dB and the three-stage has 16-13dB gain, less than 4dB noise figure.更多还原