【摘要】 本文介绍了单片集成GaAs MESFET微波开关的设计方法和制作工艺.利用空气桥和通孔接地等工艺技术,研制成的调配型宽带单刀单掷开关在0.01～7GHz内,插损为2～3.5dB,隔离度不小于32dB;分布型宽带单刀双掷开关在4.5～7GHz内,插损为1～2dB,隔离度不小于21dB,5GHz下的最大功率容量为3瓦.实验也证实电路的开通时间小于0.6ns.更多还原

【Abstract】 The paper describes a design method and fabrication technology of monolithic integrated GaAs MESFET microwave switches. By means of air-bridge and via-hole grounding, two kinds of GaAs microwave switches have been fabricated. The adjusted-matching broadband SPDT switch has an insertion loss of 2-3.5dB and an isolation of better than 32dB in the frequency range from 0.01 to 7GHz, and the distributed broadband SPDT switch exhibits an insertion loss of 1-2dB, an isolation of better than21dB from 4.5 to 7GHz and a maximum power-handling capability of 3 watts at 5GHz. Experiments have also demonstrated a switch-on time of less than 0.6 nano-second.更多还原